Chin. J. Semicond. > 1991, Volume 12 > Issue 8 > 513-517

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MBE GaAs/GaP(001)异质外延层结构参数的X射线双晶衍射研究

王春艳 , 王玉田 and 孔梅影

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    Received: 19 August 2015 Revised: Online: Published: 01 August 1991

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      Article Navigation >  Journal of Semiconductors  > 1991  >  12(8): 513-517
      王春艳, 王玉田, 孔梅影. MBE GaAs/GaP(001)异质外延层结构参数的X射线双晶衍射研究[J]. 半导体学报(英文版), 1991, 12(8): 513-517.
      Citation:
      王春艳, 王玉田, 孔梅影. MBE GaAs/GaP(001)异质外延层结构参数的X射线双晶衍射研究[J]. 半导体学报(英文版), 1991, 12(8): 513-517.
      shu

      • Received Date: 2015-08-19

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