Chin. J. Semicond. > 1999, Volume 20 > Issue 5 > 437-440

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含N薄栅介质的电离辐照及退火特性

张国强 , 陆妩 , 余学锋 , 郭旗 , 任迪远 and 严荣良

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    Received: 20 August 2015 Revised: Online: Published: 01 May 1999

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      Article Navigation >  Journal of Semiconductors  > 1999  >  20(5): 437-440
      张国强, 陆妩, 余学锋, 郭旗, 任迪远, 严荣良. 含N薄栅介质的电离辐照及退火特性[J]. 半导体学报(英文版), 1999, 20(5): 437-440.
      Citation:
      张国强, 陆妩, 余学锋, 郭旗, 任迪远, 严荣良. 含N薄栅介质的电离辐照及退火特性[J]. 半导体学报(英文版), 1999, 20(5): 437-440.
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      • Received Date: 2015-08-20

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