| Citation: |
Zhou Zhiwen, Cai Zhimeng, Zhang Yong, Cai Kunhuang, Zhou Bi, Lin Guijiang, Wang Jianyuan, Li Cheng, Lai Hongkai, Chen Songyan, Yu Jinzhong, Wang Qiming. Growth of Thick Ge Epitaxial Layers with Low Dislocation Density on Silicon Substrate by UHV/CVD[J]. Journal of Semiconductors, 2008, 29(2): 315-318.
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Zhou Z W, Cai Z M, Zhang Y, Cai K H, Zhou B, Lin G J, Wang J Y, Li C, Lai H K, Chen S Y, Yu J Z, Wang Q M. Growth of Thick Ge Epitaxial Layers with Low Dislocation Density on Silicon Substrate by UHV/CVD[J]. J. Semicond., 2008, 29(2): 315.
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Growth of Thick Ge Epitaxial Layers with Low Dislocation Density on Silicon Substrate by UHV/CVD
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Abstract
Thick Ge epitaxial layers are grown on Si(001) substrates with low temperature buffer layers with ultra-high vacuum chemical vapor deposition systems using Si2H6 and GeH4 as precursors.The deposition process of the Ge layer on Si is investigated in real time by reflection high-energy electron diffraction, and the quality of the Ge layer was evaluated by atomic force microscopy, double crystal X-ray diffraction (XRD), and Raman measurement.The root-mean-square surface roughness of the Ge epilayer with a thickness of 550nm is less than 1nm and the full-width-at-half maximum of the Ge peak of the XRD profile and the Ge-Ge mode of the Raman spectra are about 530" and 5.5cm-1, respectively.These measurements indicate that the Ge epitaxial layer is of good quality.The etch pit density related to threading dislocations is less than 5e5cm-2.This is a promising material for Si-based long wavelength photodetectors and electronic devices-
Keywords:
- Ge/Si heteroepitaxy,
- relaxed buffer,
- Ge
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References
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Proportional views
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