Chin. J. Semicond. > 1996, Volume 17 > Issue 1 > 55-59
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IGBT准数值模型和模拟

弓小武，楼旭，罗晋生

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    Received: 18 August 2015 Revised: Online: Published: 01 January 1996

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      Article Navigation >  Journal of Semiconductors  > 1996  >  17(1): 55-59
      弓小武，楼旭，罗晋生. IGBT准数值模型和模拟[J]. 半导体学报(英文版), 1996, 17(1): 55-59.
      Citation:
      弓小武，楼旭，罗晋生. IGBT准数值模型和模拟[J]. 半导体学报(英文版), 1996, 17(1): 55-59.
      shu

      • Received Date: 2015-08-18

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