Chin. J. Semicond. > 1992, Volume 13 > Issue 3 > 181-185
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直接法-多次矩法联合计算高能离子注入化合物靶损伤分布

江炳尧 , 杨根庆 and 邹世昌

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    Received: 19 August 2015 Revised: Online: Published: 01 March 1992

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      Article Navigation >  Journal of Semiconductors  > 1992  >  13(3): 181-185
      江炳尧, 杨根庆, 邹世昌. 直接法-多次矩法联合计算高能离子注入化合物靶损伤分布[J]. 半导体学报(英文版), 1992, 13(3): 181-185.
      Citation:
      江炳尧, 杨根庆, 邹世昌. 直接法-多次矩法联合计算高能离子注入化合物靶损伤分布[J]. 半导体学报(英文版), 1992, 13(3): 181-185.
      shu

      • Received Date: 2015-08-19

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