LETTERS
Abstract: We describe the fabrication of metal nanogaps of sub-20nm in feature size using the proximity effect in electron beam lithography (EBL).The proximity effect is extended to develop a flexible and practical method for preparing metal (e.g.Au or Ag) nanogaps and arrays in combination with a transfer process (e.g.,deposition/lift-off).Different from the direct gap-writing process,the nanogap precursor structures (nanoconnections) were designed by GDSII software and then written by electron beam.Following a deposition and lift-off process,the metal nanogaps were obtained and the nanogap size can be lowered to ~10nm by controlling the exposure dose in EBL.
Key words: metal nanogap, nanofabrication, proximity effect, electron beam lithography
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Received: 18 August 2015 Revised: 29 April 2008 Online: Published: 01 September 2008
| Citation: |
Sun Yan, Chen Xin, Dai Ning. Fabrication of Sub-20nm Metal Nanogaps from Nanoconnections by the Extended Proximity Effect[J]. Journal of Semiconductors, 2008, 29(9): 1666-1669.
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Sun Y, Chen X, Dai N. Fabrication of Sub-20nm Metal Nanogaps from Nanoconnections by the Extended Proximity Effect[J]. J. Semicond., 2008, 29(9): 1666.
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