Chin. J. Semicond. > 2001, Volume 22 > Issue 8 > 1030-1034
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在蓝宝石衬底两个相反c面同时生长氮化镓薄膜的差异

韩培德 , 段晓峰 , 孙家龙 , 张泽 and 王占国

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Key words: 极性, GaN, MOVPE, 微观结构

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    Received: 20 August 2015 Revised: Online: Published: 01 August 2001

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      Article Navigation >  Journal of Semiconductors  > 2001  >  22(8): 1030-1034
      韩培德, 段晓峰, 孙家龙, 张泽, 王占国. 在蓝宝石衬底两个相反c面同时生长氮化镓薄膜的差异[J]. 半导体学报(英文版), 2001, 22(8): 1030-1034.
      Citation:
      韩培德, 段晓峰, 孙家龙, 张泽, 王占国. 在蓝宝石衬底两个相反c面同时生长氮化镓薄膜的差异[J]. 半导体学报(英文版), 2001, 22(8): 1030-1034.
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      • Received Date: 2015-08-20

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