| Citation: |
Zhang Yacong, Chen Zhongjian, Lu Wengao, Zhao Baoying, Ji Lijiu. A Fully Integrated CMOS Readout Circuit for Particle Detectors[J]. Journal of Semiconductors, 2007, 28(2): 182-188.
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Zhang Y C, Chen Z J, Lu W G, Zhao B Y, Ji L J. A Fully Integrated CMOS Readout Circuit for Particle Detectors[J]. Chin. J. Semicond., 2007, 28(2): 182.
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A Fully Integrated CMOS Readout Circuit for Particle Detectors
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Abstract
Novel schemes for a charge sensitive amplifier (CSA) and a CR-(RC)n semi-Gaussian shaper in a fully integrated CMOS readout circuit for particle detectors are presented.The CSA is designed with poly-resistors as feedback components to reduce noise.Compared with conventional CSA,the input referred equivalent noise charge(ENC) is simulated to be reduced from 5036e to 2381e with a large detector capacitance of 150pF at the cost of 0.5V output swing loss.The CR-(RC)n semi-Gaussian shaper uses MOS transistors in the triode region in series with poly-resistors to compensate process variation without much linearity reduction. -
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