Chin. J. Semicond. > 1988, Volume 9 > Issue 2 > 189-199
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零偏源MOS结构的栅电荷弛豫机制及近少子带边界面态分布的瞬态谱测定

郑心畬 and 李志坚

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    Received: 19 August 2015 Revised: Online: Published: 01 February 1988

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      Article Navigation >  Journal of Semiconductors  > 1988  >  9(2): 189-199
      郑心畬, 李志坚. 零偏源MOS结构的栅电荷弛豫机制及近少子带边界面态分布的瞬态谱测定[J]. 半导体学报(英文版), 1988, 9(2): 189-199.
      Citation:
      郑心畬, 李志坚. 零偏源MOS结构的栅电荷弛豫机制及近少子带边界面态分布的瞬态谱测定[J]. 半导体学报(英文版), 1988, 9(2): 189-199.
      shu

      • Received Date: 2015-08-19

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