Chin. J. Semicond. > 2000, Volume 21 > Issue 4 > 378-382
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MOS晶体管中辐照引起的陷阱正电荷的强压退火

姚育娟 , 张正选 , 姜景和 , 何宝平 and 罗尹虹

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Key words: 偏压退火, 辐照引起的陷阱正电荷, MOS晶体管

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    Received: 20 August 2015 Revised: Online: Published: 01 April 2000

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      Article Navigation >  Journal of Semiconductors  > 2000  >  21(4): 378-382
      姚育娟, 张正选, 姜景和, 何宝平, 罗尹虹. MOS晶体管中辐照引起的陷阱正电荷的强压退火[J]. 半导体学报(英文版), 2000, 21(4): 378-382.
      Citation:
      姚育娟, 张正选, 姜景和, 何宝平, 罗尹虹. MOS晶体管中辐照引起的陷阱正电荷的强压退火[J]. 半导体学报(英文版), 2000, 21(4): 378-382.
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      • Received Date: 2015-08-20

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