Chin. J. Semicond. > 1992, Volume 13 > Issue 4 > 199-208

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GaAs MESFET栅的取向效应——Ⅰ.解析模型

黄庆安 , 吕世骥 and 童勤义

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    Received: 19 August 2015 Revised: Online: Published: 01 April 1992

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      Article Navigation >  Journal of Semiconductors  > 1992  >  13(4): 199-208
      黄庆安, 吕世骥, 童勤义. GaAs MESFET栅的取向效应——Ⅰ.解析模型[J]. 半导体学报(英文版), 1992, 13(4): 199-208.
      Citation:
      黄庆安, 吕世骥, 童勤义. GaAs MESFET栅的取向效应——Ⅰ.解析模型[J]. 半导体学报(英文版), 1992, 13(4): 199-208.
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      • Received Date: 2015-08-19

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