Chin. J. Semicond. > 2000, Volume 21 > Issue 6 > 548-553
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高质量立方相InGaN的生长

李顺峰 , 杨辉 , 徐大鹏 , 赵德刚 , 孙小玲 , 王玉田 and 张书明

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Key words: InGaN, MOCVD生长, 光致发光

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    Received: 20 August 2015 Revised: Online: Published: 01 June 2000

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      Article Navigation >  Journal of Semiconductors  > 2000  >  21(6): 548-553
      李顺峰, 杨辉, 徐大鹏, 赵德刚, 孙小玲, 王玉田, 张书明. 高质量立方相InGaN的生长[J]. 半导体学报(英文版), 2000, 21(6): 548-553.
      Citation:
      李顺峰, 杨辉, 徐大鹏, 赵德刚, 孙小玲, 王玉田, 张书明. 高质量立方相InGaN的生长[J]. 半导体学报(英文版), 2000, 21(6): 548-553.
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      • Received Date: 2015-08-20

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