Chin. J. Semicond. > 1991, Volume 12 > Issue 9 > 578-582

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LP-MOVPE Ga_(1-x)In_xAs/InP量子阱结构材料

段树坤 , 熊飞克 , 李学斌 , 李晶 , 王玉田 , 江德生 , 徐俊英 , 万寿科 and 钱家骏

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    Received: 19 August 2015 Revised: Online: Published: 01 September 1991

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      Article Navigation >  Journal of Semiconductors  > 1991  >  12(9): 578-582
      段树坤, 熊飞克, 李学斌, 李晶, 王玉田, 江德生, 徐俊英, 万寿科, 钱家骏. LP-MOVPE Ga_(1-x)In_xAs/InP量子阱结构材料[J]. 半导体学报(英文版), 1991, 12(9): 578-582.
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      段树坤, 熊飞克, 李学斌, 李晶, 王玉田, 江德生, 徐俊英, 万寿科, 钱家骏. LP-MOVPE Ga_(1-x)In_xAs/InP量子阱结构材料[J]. 半导体学报(英文版), 1991, 12(9): 578-582.
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      • Received Date: 2015-08-19

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