| Citation: |
Zhang Yinzhu, Ye Zhizhen, Lü Jianguo, He Haiping, Gu Xiuquan. Preparation and Characterization of p-Type ZnO Using Li··N Dual·-Acceptor Doping Method by Pulsed Laser Deposition[J]. Journal of Semiconductors, 2007, 28(S1): 322-325.
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Zhang Y Z, Ye Z Z, L J, He H P, Gu X Q. Preparation and Characterization of p-Type ZnO Using Li··N Dual·-Acceptor Doping Method by Pulsed Laser Deposition[J]. Chin. J. Semicond., 2007, 28(S1): 322.
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Preparation and Characterization of p-Type ZnO Using Li··N Dual·-Acceptor Doping Method by Pulsed Laser Deposition
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Abstract
p-type ZnOthin films are realized by pulsed laser deposition using a Li-N dual·acceptor doping method.The lowest resistivity is found to be 3.99.Ω·cm with a Hall mobility of 0.17cm2/(V·s)and a hole concentration of 9.12×10^18 cm-3. The emissions associated with Li and N acceptor states are revealed by low temperature photolumineseence spectra,and the aeceptor energy thus determined is～120 and～222meV。respectively.The ZnO-based p-n homojunction(p-ZnO：(Li，N)/nZnO)exhibits a typical rectification behavior. -
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