Chin. J. Semicond. > 1987, Volume 8 > Issue 1 > 11-19
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离化吉布斯自由能是远比离化焓为好的表征深能级在禁带中位置的参量

陈开茅 and 秦国刚

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    Received: 19 August 2015 Revised: Online: Published: 01 January 1987

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      Article Navigation >  Journal of Semiconductors  > 1987  >  8(1): 11-19
      陈开茅, 秦国刚. 离化吉布斯自由能是远比离化焓为好的表征深能级在禁带中位置的参量[J]. 半导体学报(英文版), 1987, 8(1): 11-19.
      Citation:
      陈开茅, 秦国刚. 离化吉布斯自由能是远比离化焓为好的表征深能级在禁带中位置的参量[J]. 半导体学报(英文版), 1987, 8(1): 11-19.
      shu

      • Received Date: 2015-08-19

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