Chin. J. Semicond. > 2006, Volume 27 > Issue 12 > 2160-2162

PAPERS

32GHz MMIC Power Amplifier Using 0.25μm GaAs PHEMT

Gu Jianzhong, Zhang Jian, Yu Xiaojing, Qian Rong, Li Lingyun and Sun Xiaowei

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Abstract: A 32GHz 0.5W PHEMT MMIC power amplifier,which has three stages,is designed,fabricated,and measured.It operates under a 6V power supply and 600mA DC bias.A 17.4dB maximum small signal gain and 0.5W saturated output power are achieved at the operation frequency.

Key words: MMICpower amplifierPHEMT

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    陈效建, 吴旭, 李拂晓, 焦刚. Pt基埋栅势垒GaAs基增强型InAlAs/InGaAs改性高电子迁移率晶体管[J]. 半导体学报(英文版), 2004, 25(9): 1137-1142.
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    History

    Received: 18 August 2015 Revised: 23 August 2006 Online: Published: 01 December 2006

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      Gu Jianzhong, Zhang Jian, Yu Xiaojing, Qian Rong, Li Lingyun, Sun Xiaowei. 32GHz MMIC Power Amplifier Using 0.25μm GaAs PHEMT[J]. Journal of Semiconductors, 2006, 27(12): 2160-2162. ****Gu J Z, Zhang J, Yu X J, Qian R, Li L Y, Sun X W. 32GHz MMIC Power Amplifier Using 0.25μm GaAs PHEMT[J]. Chin. J. Semicond., 2006, 27(12): 2160.
      Citation:
      Gu Jianzhong, Zhang Jian, Yu Xiaojing, Qian Rong, Li Lingyun, Sun Xiaowei. 32GHz MMIC Power Amplifier Using 0.25μm GaAs PHEMT[J]. Journal of Semiconductors, 2006, 27(12): 2160-2162. ****
      Gu J Z, Zhang J, Yu X J, Qian R, Li L Y, Sun X W. 32GHz MMIC Power Amplifier Using 0.25μm GaAs PHEMT[J]. Chin. J. Semicond., 2006, 27(12): 2160.

      32GHz MMIC Power Amplifier Using 0.25μm GaAs PHEMT

      • Received Date: 2015-08-18
      • Accepted Date: 2006-02-27
      • Revised Date: 2006-08-23
      • Published Date: 2006-12-04

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