| Citation: |
Tan Weidong, Tang Youqing, Ma Lixing, Luo Hong, Zhang Wenqing, Gao Tao. High Resistivity and Thick Epitaxial Layer of n-Type on Low Resistivity p-Type Substrates[J]. Journal of Semiconductors, 2006, 27(S1): 183-185.
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Tan W D, Tang Y Q, Ma L X, Luo H, Zhang W Q, Gao T. High Resistivity and Thick Epitaxial Layer of n-Type on Low Resistivity p-Type Substrates[J]. Chin. J. Semicond., 2006, 27(13): 183.
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High Resistivity and Thick Epitaxial Layer of n-Type on Low Resistivity p-Type Substrates
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Abstract
A epitaxial technique of high resistivity and thick epitaxial layer is presented in this paper.The thick n-type epitaxial films with high resistivity are fabricated by an especial control method on p-type silicon substrates which resistivity is less than 0.02Ω·cm on PE-2061S.The epitaxial resistivity is more than 40Ω·cm and the epitaxial thickness is more than 100μm.It is demonstrated that the epitaxial wafers can meet the requirements for the IGBT applications. -
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