Abstract: This paper proposes a model for polysilicon quantum effects in MOSFETs.Based on the least-squares curve fit,electron distribution functions are obtained.Then, solving Possion equations,a physically based analytical model is described.There are only two fitting parameters in the new model that can be used to describe different states such as accumulation,threshold,and strong inversion.However,different models used to depict those as different states,respectively.Additionally threshold voltages with the new model are calculated and compared with the numerical simulation results.The good agreement between them proves that the new model is correct and exact.

Key words: polysilicon, quantum effect, fitting parameter, screening length, potential distribution function, electrical field distribution function