| Citation: |
Jin Hua, Bu Fanliang, Li Lihua, Wang Rong, Zhang Zhenzhong, Zhang Ligong, Zheng Zhuhong, Shen Dezhen. Exciton Recombination in the Coupling Structure of a ZnCdSe Quantum Well and CdSe Quantum Dots[J]. Journal of Semiconductors, 2008, 29(11): 2252-2255.
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Jin H, Bu F L, Li L H, Wang R, Zhang Z Z, Zhang L G, Zheng Z H, Shen D Z. Exciton Recombination in the Coupling Structure of a ZnCdSe Quantum Well and CdSe Quantum Dots[J]. J. Semicond., 2008, 29(11): 2252.
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Exciton Recombination in the Coupling Structure of a ZnCdSe Quantum Well and CdSe Quantum Dots
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Abstract
Coupling structures for a ZnCdSe quantum well and CdSe quantum dots (QDs) with different thickness of barrier layer were fabricated by metal organic chemical vapor deposition (MOCVD).The recombination and tunneling of excitons in the ZnCdSe QW/CdSe QDs structure were investigated using photoluminescence (PL) spectra at 5K.The tunneling process of the exciton from QW to QDs was observed.The excitation light power dependence of PL peak position and PL-integrated intensity were also investigated,respectively.The results reveal that in this structure with thinner barrier layer,the absorption saturation in ZnCdSe quantum well can be restrained.-
Keywords:
- ZnCdSe QW/CdSe QDs,
- photoluminescence,
- recombination,
- tunneling
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References
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Proportional views
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