| Citation: |
Xu Bojuan, Du Gang, Xia Zhiliang, Zeng Lang, Han Ruqi, Liu Xiaoyan. Threshold Voltage Model of a Double-Gate MOSFET with Schottky Source and Drain[J]. Journal of Semiconductors, 2007, 28(8): 1179-1183.
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Xu B J, Du G, Xia Z L, Zeng L, Han R Q, Liu X Y. Threshold Voltage Model of a Double-Gate MOSFET with Schottky Source and Drain[J]. Chin. J. Semicond., 2007, 28(8): 1179.
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Threshold Voltage Model of a Double-Gate MOSFET with Schottky Source and Drain
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Abstract
A quasi two-dimensional (2D) analytical model of a double-gate (DG) MOSFET with Schottky source/drain is developed based on the Poisson equation.The 2D potential distribution in the channel is calculated.An expression for threshold voltage for a short-channel DG MOSFET with Schottky S/D is also presented by defining the turn-on condition.The results of the model are verified by the numerical simulator DESSIS-ISE.-
Keywords:
- double-gate,
- Schottky barrier,
- threshold voltage
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References
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Proportional views
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