An AlGaN-Based Resonant-Cavity-Enhanced p-i-n Ultraviolet Photodetector

Ji Xiaoli; Jiang Ruolian; Zhou Jianjun; Liu Bin; Xie Zili; Han Ping; Zhang Rong; Zheng Youdou; Gong Haimei

Chin. J. Semicond. > 2007, Volume 28 > Issue 12 > 1957-1960

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An AlGaN-Based Resonant-Cavity-Enhanced p-i-n Ultraviolet Photodetector

Ji Xiaoli, Jiang Ruolian, Zhou Jianjun, Liu Bin, Xie Zili, Han Ping, Zhang Rong, Zheng Youdou and Gong Haimei

+ Author Affiliations

Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials,Department of Physics,Nanjing University,Nanjing 210093,China
Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials,Department of Physics,Nanjing University,Nanjing 210093,China
Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials,Department of Physics,Nanjing University,Nanjing 210093,China
Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials,Department of Physics,Nanjing University,Nanjing 210093,China
Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials,Department of Physics,Nanjing University,Nanjing 210093,China
Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials,Department of Physics,Nanjing University,Nanjing 210093,China
Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials,Department of Physics,Nanjing University,Nanjing 210093,China
Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials,Department of Physics,Nanjing University,Nanjing 210093,China
Shanghai Institute of Technical Physics,Chinese Academy of Sciences,Shanghai 200080,China

Abstract: AlGaN-based resonant-cavity-enhanced p-i-n photodetectors operating at a wavelength of 320nm were designed.A 40.5-pair AlN/Al0.3Ga0.7N distributed Bragg reflector and the air/GaN interface,serving as the back and front mirror,respectively,form a resonant cavity.In the cavity there is a p-GaN/ i-GaN/ n-Al0.38Ga0.62N structure.The wafer was fully epitaxial on the sapphire substrate and GaN template by metalorganic chemical vapor deposition.The response spectrum exhibits selective enhancement at 313nm,with a responsivity of 14mA/W under zero bias.

Key words: ultraviolet photodetector, resonant-cavity-enhanced, AlGaN, distributed Bragg reflector, transfer matrix method

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Ji Xiaoli, Jiang Ruolian, Zhou Jianjun, Liu Bin, Xie Zili, Han Ping, Zhang Rong, Zheng Youdou, Gong Haimei. An AlGaN-Based Resonant-Cavity-Enhanced p-i-n Ultraviolet Photodetector[J]. Journal of Semiconductors, 2007, 28(12): 1957-1960.

Ji X L, Jiang R L, Zhou J J, Liu B, Xie Z L, Han P, Zhang R, Zheng Y D, Gong H M. An AlGaN-Based Resonant-Cavity-Enhanced p-i-n Ultraviolet Photodetector[J]. Chin. J. Semicond., 2007, 28(12): 1957.

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Received: 18 August 2015 Revised: 13 July 2007 Online: Published: 01 December 2007

AlGaN-based resonant-cavity-enhanced p-i-n photodetectors operating at a wavelength of 320nm were designed.A 40.5-pair AlN/Al0.3Ga0.7N distributed Bragg reflector and the air/GaN interface,serving as the back and front mirror,respectively,form a resonant cavity.In the cavity there is a p-GaN/ i-GaN/ n-Al0.38Ga0.62N structure.The wafer was fully epitaxial on the sapphire substrate and GaN template by metalorganic chemical vapor deposition.The response spectrum exhibits selective enhancement at 313nm,with a responsivity of 14mA/W under zero bias.

An AlGaN-Based Resonant-Cavity-Enhanced p-i-n Ultraviolet Photodetector

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