Chin. J. Semicond. > 2002, Volume 23 > Issue 3 > 280-284
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用ECRCVD法制备的纳米碳化硅薄膜及其室温下的强光发射

余明斌 , 杨安 , 余宁梅 and 马剑平

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Key words: 纳米, 碳化硅, 薄膜, 光致发光

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    Received: 19 August 2015 Revised: Online: Published: 01 March 2002

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      Article Navigation >  Journal of Semiconductors  > 2002  >  23(3): 280-284
      余明斌, 杨安, 余宁梅, 马剑平. 用ECRCVD法制备的纳米碳化硅薄膜及其室温下的强光发射[J]. 半导体学报(英文版), 2002, 23(3): 280-284.
      Citation:
      余明斌, 杨安, 余宁梅, 马剑平. 用ECRCVD法制备的纳米碳化硅薄膜及其室温下的强光发射[J]. 半导体学报(英文版), 2002, 23(3): 280-284.
      shu

      • Received Date: 2015-08-19

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