Chin. J. Semicond. > 1996, Volume 17 > Issue 6 > 410-415
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Si衬底上生长的GaAs薄膜中0．96eV发光带的特性研究

赵家龙，靳春明，高瑛，刘学彦，窦恺，黄世华，虞家琪，梁家昌，高鸿楷.

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    Received: 18 August 2015 Revised: Online: Published: 01 June 1996

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      Article Navigation >  Journal of Semiconductors  > 1996  >  17(6): 410-415
      赵家龙，靳春明，高瑛，刘学彦，窦恺，黄世华，虞家琪，梁家昌，高鸿楷.. Si衬底上生长的GaAs薄膜中0．96eV发光带的特性研究[J]. 半导体学报(英文版), 1996, 17(6): 410-415.
      Citation:
      赵家龙，靳春明，高瑛，刘学彦，窦恺，黄世华，虞家琪，梁家昌，高鸿楷.. Si衬底上生长的GaAs薄膜中0．96eV发光带的特性研究[J]. 半导体学报(英文版), 1996, 17(6): 410-415.
      shu

      • Received Date: 2015-08-18

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