Stillinger-Weber Parameters for InN：Application to InxGa1-xN

Lei Huaping; Jiang Xunya; Yu Guanghui; Chen J; Petit S; Ruterana P; Nouet G

Structure des Interfaces et Fonctionnalite des Couches Minces (SIFCOM)，UMR CNRS 6176，Caen 14050，France
State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology，Chinese Academy of Sciences，Shanghai 200050，China,State Key Laboratory of Functional Materials for Informatics,Shanghai Institute of Microsystem and Information Technology，Chinese Academy of Sciences，Shanghai 200050，China,State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology，Chinese Academy of Sciences，Shanghai 200050，China,Laboratoire de Recherche sur les Proprietes des Materiaux Nouveaux，Institut Universitaire de Technologie d’Alencon，Damigny 61250，France,Structure des Interfaces et Fonctionnalite des Couches Minces (SIFCOM)，UMR CNRS 6176，Caen 14050，France,Structure des Interfaces et Fonctionnalite des Couches Minces (SIFCOM)，UMR CNRS 6176，Caen 14050，France and Structure des Interfaces et Fonctionnalite des Couches Minces (SIFCOM)，UMR CNRS 6176，Caen 14050，France

Article Navigation > Journal of Semiconductors > 2007 > 28(S1): 12-15

Lei Huaping, Jiang Xunya, Yu Guanghui, Chen J, Petit S, Ruterana P, Nouet G. Stillinger-Weber Parameters for InN：Application to InxGa1-xN[J]. Journal of Semiconductors, 2007, 28(S1): 12-15. ****Lei H P, Jiang X Y, Yu G H, C J, P S, Ruterana P, Nouet G. Stillinger-Weber Parameters for InN：Application to InxGa1-xN[J]. Chin. J. Semicond., 2007, 28(S1): 12.

Citation:

Lei Huaping, Jiang Xunya, Yu Guanghui, Chen J, Petit S, Ruterana P, Nouet G. Stillinger-Weber Parameters for InN：Application to InxGa1-xN[J]. Journal of Semiconductors, 2007, 28(S1): 12-15. ****

Lei H P, Jiang X Y, Yu G H, C J, P S, Ruterana P, Nouet G. Stillinger-Weber Parameters for InN：Application to InxGa1-xN[J]. Chin. J. Semicond., 2007, 28(S1): 12.

Citation:

Lei Huaping, Jiang Xunya, Yu Guanghui, Chen J, Petit S, Ruterana P, Nouet G. Stillinger-Weber Parameters for InN：Application to InxGa1-xN[J]. Journal of Semiconductors, 2007, 28(S1): 12-15. ****

Lei H P, Jiang X Y, Yu G H, C J, P S, Ruterana P, Nouet G. Stillinger-Weber Parameters for InN：Application to InxGa1-xN[J]. Chin. J. Semicond., 2007, 28(S1): 12.

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Stillinger-Weber Parameters for InN：Application to InxGa1-xN

Structure des Interfaces et Fonctionnalite des Couches Minces (SIFCOM)，UMR CNRS 6176，Caen 14050，France
State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology，Chinese Academy of Sciences，Shanghai 200050，China,State Key Laboratory of Functional Materials for Informatics,Shanghai Institute of Microsystem and Information Technology，Chinese Academy of Sciences，Shanghai 200050，China,State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology，Chinese Academy of Sciences，Shanghai 200050，China,Laboratoire de Recherche sur les Proprietes des Materiaux Nouveaux，Institut Universitaire de Technologie d’Alencon，Damigny 61250，France,Structure des Interfaces et Fonctionnalite des Couches Minces (SIFCOM)，UMR CNRS 6176，Caen 14050，France,Structure des Interfaces et Fonctionnalite des Couches Minces (SIFCOM)，UMR CNRS 6176，Caen 14050，France and Structure des Interfaces et Fonctionnalite des Couches Minces (SIFCOM)，UMR CNRS 6176，Caen 14050，France

Received Date: 2016-05-27
Published Date: 2016-04-28

Abstract

Abstract

By using a Stillinger-Weber(SW)type empirical potential for InN，the atomic structures of InxGa1-xN alloys and the deformations induced by In-rich clusters in InGaN/GaN quantum wells are presented.The SW parameters are determined by fitting the lattice parameters and elastic constants of InN in wurtzite and zinc-blende structures.The energy of quantum wells containing In-rich clusters is investigated.
- InN,
- SW parameters,
- InGaN quantum well

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