Chin. J. Semicond. > 1987, Volume 8 > Issue 3 > 261-269
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Ni在Si(111)和Si(100)面上吸附的理论研究

田曾举 , 张开明 , 叶令 and 谢希德

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    Received: 19 August 2015 Revised: Online: Published: 01 March 1987

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      Article Navigation >  Journal of Semiconductors  > 1987  >  8(3): 261-269
      田曾举, 张开明, 叶令, 谢希德. Ni在Si(111)和Si(100)面上吸附的理论研究[J]. 半导体学报(英文版), 1987, 8(3): 261-269.
      Citation:
      田曾举, 张开明, 叶令, 谢希德. Ni在Si(111)和Si(100)面上吸附的理论研究[J]. 半导体学报(英文版), 1987, 8(3): 261-269.
      shu

      • Received Date: 2015-08-19

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