Chin. J. Semicond. > 1984, Volume 5 > Issue 4 > 345-352

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流体静压力下的Si中的深杂质能级

夏建白

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    Received: 20 August 2015 Revised: Online: Published: 01 April 1984

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      Article Navigation >  Journal of Semiconductors  > 1984  >  5(4): 345-352
      夏建白. 流体静压力下的Si中的深杂质能级[J]. 半导体学报(英文版), 1984, 5(4): 345-352.
      Citation:
      夏建白. 流体静压力下的Si中的深杂质能级[J]. 半导体学报(英文版), 1984, 5(4): 345-352.
      shu

      • Received Date: 2015-08-20

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