Chin. J. Semicond. > 1989, Volume 10 > Issue 10 > 754-762
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轻掺杂漏(LDD)MOSFET的数值模拟

郑庆平 , 章倩苓 and 阮刚

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    Received: 19 August 2015 Revised: Online: Published: 01 October 1989

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      Article Navigation >  Journal of Semiconductors  > 1989  >  10(10): 754-762
      郑庆平, 章倩苓, 阮刚. 轻掺杂漏(LDD)MOSFET的数值模拟[J]. 半导体学报(英文版), 1989, 10(10): 754-762.
      Citation:
      郑庆平, 章倩苓, 阮刚. 轻掺杂漏(LDD)MOSFET的数值模拟[J]. 半导体学报(英文版), 1989, 10(10): 754-762.
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      • Received Date: 2015-08-19

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