Chin. J. Semicond. > 1996, Volume 17 > Issue 6 > 452-457
|

CONTENTS

1．5μm全耗尽CMOS／SIMOX门阵列的研制

张兴，魏丽琼，王阳元

+ Author Affiliations

PDF

    • Search

    Advanced Search >>

    GET CITATION

    shu

    Export: BibTex EndNote

    Article Metrics

    Article views: 2301 Times PDF downloads: 1219 Times Cited by: 0 Times

    History

    Received: 18 August 2015 Revised: Online: Published: 01 June 1996

    Catalog

      Email This Article

      User name:
      Email:*请输入正确邮箱
      Code:*验证码错误
      Send
      Article Navigation >  Journal of Semiconductors  > 1996  >  17(6): 452-457
      张兴，魏丽琼，王阳元. 1．5μm全耗尽CMOS／SIMOX门阵列的研制[J]. 半导体学报(英文版), 1996, 17(6): 452-457.
      Citation:
      张兴，魏丽琼，王阳元. 1．5μm全耗尽CMOS／SIMOX门阵列的研制[J]. 半导体学报(英文版), 1996, 17(6): 452-457.
      shu

      • Received Date: 2015-08-18

      Catalog

        Journal of Semiconductors © 2017 All Rights Reserved   京ICP备05085259号-2

        /

        DownLoad:  Full-Size Img  PowerPoint
        Return
        Return