Chin. J. Semicond. > 2001, Volume 22 > Issue 8 > 1069-1074

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采用0.25μmCMOS工艺、适用于LVDS驱动器的高性能多相时钟生成器的设计

陈钰 , 洪志良 and 朱江

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Key words: 锁相环, 多相时钟生成器, 环形压控振荡器, 温度补偿, 电源抑制比

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    Received: 20 August 2015 Revised: Online: Published: 01 August 2001

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      陈钰, 洪志良, 朱江. 采用0.25μmCMOS工艺、适用于LVDS驱动器的高性能多相时钟生成器的设计[J]. 半导体学报(英文版), 2001, 22(8): 1069-1074.
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      陈钰, 洪志良, 朱江. 采用0.25μmCMOS工艺、适用于LVDS驱动器的高性能多相时钟生成器的设计[J]. 半导体学报(英文版), 2001, 22(8): 1069-1074.

      • Received Date: 2015-08-20

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