Chin. J. Semicond. > 1997, Volume 18 > Issue 2 > 140-145
|

CONTENTS

C~+注入硅形成β-SiC埋层研究

陈长清 , 杨立新 , 严金龙 and 陈学良

+ Author Affiliations

PDF

    • Search

    Advanced Search >>

    GET CITATION

    shu

    Export: BibTex EndNote

    Article Metrics

    Article views: 2435 Times PDF downloads: 1065 Times Cited by: 0 Times

    History

    Received: 19 August 2015 Revised: Online: Published: 01 February 1997

    Catalog

      Email This Article

      User name:
      Email:*请输入正确邮箱
      Code:*验证码错误
      Send
      Article Navigation >  Journal of Semiconductors  > 1997  >  18(2): 140-145
      陈长清, 杨立新, 严金龙, 陈学良. C~+注入硅形成β-SiC埋层研究[J]. 半导体学报(英文版), 1997, 18(2): 140-145.
      Citation:
      陈长清, 杨立新, 严金龙, 陈学良. C~+注入硅形成β-SiC埋层研究[J]. 半导体学报(英文版), 1997, 18(2): 140-145.
      shu

      • Received Date: 2015-08-19

      Catalog

        Journal of Semiconductors © 2017 All Rights Reserved   京ICP备05085259号-2

        /

        DownLoad:  Full-Size Img  PowerPoint
        Return
        Return