| Citation: |
Xia Jilin, Liu Bo, Song Zhitang, Feng Songlin. Influence of Deposition Parameters on Electrical Propertiesof Ge2Sb2Te5 Thin Films[J]. Journal of Semiconductors, 2006, 27(S1): 155-157.
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Xia J L, Liu B, Song Z T, Feng S L. Influence of Deposition Parameters on Electrical Propertiesof Ge2Sb2Te5 Thin Films[J]. Chin. J. Semicond., 2006, 27(13): 155.
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Influence of Deposition Parameters on Electrical Propertiesof Ge2Sb2Te5 Thin Films
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Abstract
The influence of deposition parameters such as sputtering power and pressure during sputtering on the electrical properties of Ge2Sb2Te5 is investigated.Through measuring the square resistances changing with different annealing temperatures,the deposition mechanism is researched.The results indicate that the sputtering power does not influence the square resistance distinctly,but with the sputtering pressure increasing,the resistance decreases with annealing temperature much more quickly,which means that the crystallization temperature for phase-change from face-centered-cubic to hexagonal structure decreases with the increasing of sputtering pressure.-
Keywords:
- Ge2Sb2Te5,
- electrical properties,
- deposition parameters,
- phase change
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References
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Proportional views
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