A 5.1W/mm Power Density GaN HEMT on Si Substrate

Feng Zhihong; Yin Jiayun; Yuan Fengpo; Liu Bo; Liang Dong; Mo Jianghui; Zhang Zhiguo; Wang Yong; Feng Zhen; Li Xiaobai; Yang Kewu; Cai Shujun

Chin. J. Semicond. > 2007, Volume 28 > Issue 12 > 1949-1951

PAPERS

A 5.1W/mm Power Density GaN HEMT on Si Substrate

Feng Zhihong, Yin Jiayun, Yuan Fengpo, Liu Bo, Liang Dong, Mo Jianghui, Zhang Zhiguo, Wang Yong, Feng Zhen, Li Xiaobai, Yang Kewu and Cai Shujun

+ Author Affiliations

Abstract: High quality GaN HEMT materials were grown on Si (111) substrates by MOCVD.The FWHM of the XRD (002) rocking curve of the 1mm-thick GaN epilayer is 573" ,and the (102) is 668" .2μm-thick crack-free GaN HEMT materials were achieved by the interlayer technique.The RT 2DEG mobility is 1350cm2/(V·s) with a sheet resistance of 328Ω/□.The DC and RF characteristics of a GaN microwave power device with a 1mm gate width were probed.The saturated drain current density is around 0.8A/mm,and the peak transconductance is beyond 250mS/mm.Tuning for a maximum output power of 5.1W at 2GHz,a gain of 9.1dB,and a peak power-added efficiency of 35% was obtained.

Key words: Si substrate, GaN HEMT, FWHM of XRD, 2DEG mobility, power density

1	Design and simulation of a novel E-mode GaN MIS-HEMT based on a cascode connection for suppression of electric field under gate and improvement of reliability Weiyi Li, Zhili Zhang, Kai Fu, Guohao Yu, Xiaodong Zhang, et al. Journal of Semiconductors, 2017, 38(7): 074001. doi: 10.1088/1674-4926/38/7/074001
2	Design, fabrication and characterising of 100 W GaN HEMT for Ku-bandapplication Chunjiang Ren, Shichang Zhong, Yuchao Li, Zhonghui Li, Yuechan Kong, et al. Journal of Semiconductors, 2016, 37(8): 084002. doi: 10.1088/1674-4926/37/8/084002
3	Optimization design on breakdown voltage of AlGaN/GaN high-electron mobility transistor Yang Liu, Changchun Chai, Chunlei Shi, Qingyang Fan, Yuqian Liu, et al. Journal of Semiconductors, 2016, 37(12): 124002. doi: 10.1088/1674-4926/37/12/124002
4	AlN/GaN high electron mobility transistors on sapphire substrates for Kaband applications Xubo Song, Guodong Gu, Yuangang Wang, Xin Tan, Xingye Zhou, et al. Journal of Semiconductors, 2016, 37(4): 044007. doi: 10.1088/1674-4926/37/4/044007
5	Modeling on oxide dependent 2DEG sheet charge density and threshold voltage in AlGaN/GaN MOSHEMT J. Panda, K. Jena, R. Swain, T. R. Lenka Journal of Semiconductors, 2016, 37(4): 044003. doi: 10.1088/1674-4926/37/4/044003
6	Analysis of charge density and Fermi level of AlInSb/InSb single-gate high electron mobility transistor S. Theodore Chandra, N. B. Balamurugan, M. Bhuvaneswari, N. Anbuselvan, N. Mohankumar, et al. Journal of Semiconductors, 2015, 36(6): 064003. doi: 10.1088/1674-4926/36/6/064003
7	Solid-state wideband GaN HEMT power amplifier with a novel negative feedback structure Zhiqun Cheng, Minshi Jia, Ya Luan, Xinxiang Lian Journal of Semiconductors, 2014, 35(12): 125005. doi: 10.1088/1674-4926/35/12/125005
8	Model development for analyzing 2DEG sheet charge density and threshold voltage considering interface DOS for AlInN/GaN MOSHEMT Devashish Pandey, T.R. Lenka Journal of Semiconductors, 2014, 35(10): 104001. doi: 10.1088/1674-4926/35/10/104001
9	A 2DEG charge density based drain current model for various Al and In molefraction mobility dependent nano-scale AlInGaN/AlN/GaN HEMT devices Godwin Raj, Hemant Pardeshi, Sudhansu Kumar Pati, N Mohankumar, Chandan Kumar Sarkar, et al. Journal of Semiconductors, 2013, 34(4): 044002. doi: 10.1088/1674-4926/34/4/044002
10	A Ku-band high power density AlGaN/GaN HEMT monolithic power amplifier Ge Qin, Chen Xiaojuan, Luo Weijun, Yuan Tingting, Pang Lei, et al. Journal of Semiconductors, 2011, 32(8): 085001. doi: 10.1088/1674-4926/32/8/085001
11	Noise performance in AlGaN/GaN HEMTs under high drain bias Pang Lei, Pu Yan, Liu Xinyu, Wang Liang, Liu Jian, et al. Journal of Semiconductors, 2009, 30(8): 084004. doi: 10.1088/1674-4926/30/8/084004
12	Annealing before gate metal deposition related noise performance in AlGaN/GaN HEMTs Pang Lei, Pu Yan, Liu Xinyu, Wang Liang, Li Chengzhan, et al. Journal of Semiconductors, 2009, 30(5): 054001. doi: 10.1088/1674-4926/30/5/054001
13	Influence of Etching Depth on Characteristics of GaN/Si Blue LEDs Zhang Ping, Liu Junlin, Zheng Changda, Jiang Fengyi Journal of Semiconductors, 2008, 29(3): 563-565.
14	TEM Characterization of Defects in GaN/InGaN Multi-Quantum Wells Grown on Silicon by MOCVD Zhu Hua, Li Cuiyun, Mo Chunlan, Jiang Fengyi, Zhang Meng, et al. Journal of Semiconductors, 2008, 29(3): 539-543.
15	X-Band Internally-Matched GaN HEMTs Wang Yong, Li Jingqiang, Zhang Zhiguo, Feng Zhen, Song Jianbo, et al. Journal of Semiconductors, 2008, 29(9): 1783-1785.
16	High Quality AIGaN/GaN HEMT Materials Grown on SiC Substrates Wang Xiaoliang, Wang Cuimei, Hu Guoxin, Ma Zhiyong, Xiao Hongling, et al. Chinese Journal of Semiconductors , 2007, 28(S1): 402-406.
17	Morphology of GaN Film on Si(1 l 1) Substrate Using AIN Buffer Liu Zhe, Wang Xiaoliang, Wang Junxi, Hu Guoxin, Li Jianping, et al. Chinese Journal of Semiconductors , 2007, 28(S1): 230-233.
18	A 22-Element Small-Signal Model of GaN HEMT Devices Liu Dan, Chen Xiaojuan, Liu Xinyu, Wu Dexin Chinese Journal of Semiconductors , 2007, 28(9): 1438-1442.
19	A New Small-Signal Modeling and Extraction Method in AlGaN/GaN HEMTs Lu Jing, Wang Yan, Ma Long, Yu Zhiping Chinese Journal of Semiconductors , 2007, 28(4): 567-572.
20	A Research on Current Collapse of GaN HEMTs Under DC High Voltage Long Fei, Du Jiangfeng, Luo Qian, Zhou Wei, Xia Jianxin, et al. Chinese Journal of Semiconductors , 2006, 27(S1): 227-230.

Search

GET CITATION

Feng Zhihong, Yin Jiayun, Yuan Fengpo, Liu Bo, Liang Dong, Mo Jianghui, Zhang Zhiguo, Wang Yong, Feng Zhen, Li Xiaobai, Yang Kewu, Cai Shujun. A 5.1W/mm Power Density GaN HEMT on Si Substrate[J]. Journal of Semiconductors, 2007, 28(12): 1949-1951.

Feng Z H, Yin J Y, Yuan F P, Liu B, Liang D, Mo J H, Zhang Z G, Wang Y, Feng Z, Li X B, Yang K W, Cai S J. A 5.1W/mm Power Density GaN HEMT on Si Substrate[J]. Chin. J. Semicond., 2007, 28(12): 1949.

Export: BibTex EndNote

Article Metrics

Article views: 3473 Times PDF downloads: 1396 Times Cited by: 0 Times

History

Received: 18 August 2015 Revised: 28 June 2007 Online: Published: 01 December 2007

High quality GaN HEMT materials were grown on Si (111) substrates by MOCVD.The FWHM of the XRD (002) rocking curve of the 1mm-thick GaN epilayer is 573" ,and the (102) is 668" .2μm-thick crack-free GaN HEMT materials were achieved by the interlayer technique.The RT 2DEG mobility is 1350cm2/(V·s) with a sheet resistance of 328Ω/□.The DC and RF characteristics of a GaN microwave power device with a 1mm gate width were probed.The saturated drain current density is around 0.8A/mm,and the peak transconductance is beyond 250mS/mm.Tuning for a maximum output power of 5.1W at 2GHz,a gain of 9.1dB,and a peak power-added efficiency of 35% was obtained.

A 5.1W/mm Power Density GaN HEMT on Si Substrate

Search

GET CITATION

Share:

Article Metrics

History

Catalog

Email This Article

A 5.1W/mm Power Density GaN HEMT on Si Substrate

Abstract

References

Proportional views

Catalog

A 5.1W/mm Power Density GaN HEMT on Si Substrate

Search

GET CITATION

Share:

Article Metrics

History

Catalog

Email This Article

A 5.1W/mm Power Density GaN HEMT on Si Substrate

Abstract

References

Proportional views

Catalog

Export File

Citation

Format

Content