MBE Growth of High Electron Mobility InP Epilayers

Shu Yongchun , Yao Jianghong , Lin Yaowang , Xing Xiaodong，Pi Biao , Xu Bo , Wang Zhanguo and and Xu Jingjun

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Key words: SSMBE, high electron mobility, InP epilayers

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Received: 18 August 2015 Revised: Online: Published: 01 August 2005

Article Navigation > Journal of Semiconductors > 2005 > 26(8): 1485-1488

Shu Yongchun, Yao Jianghong, Lin Yaowang, Xing Xiaodong，Pi Biao, Xu Bo, Wang Zhanguo, and Xu Jingjun. MBE Growth of High Electron Mobility InP Epilayers[J]. 半导体学报(英文版), 2005, 26(8): 1485-1488.

Citation:

Shu Yongchun, Yao Jianghong, Lin Yaowang, Xing Xiaodong，Pi Biao, Xu Bo, Wang Zhanguo, and Xu Jingjun. MBE Growth of High Electron Mobility InP Epilayers[J]. 半导体学报(英文版), 2005, 26(8): 1485-1488.