Chin. J. Semicond. > 2002, Volume 23 > Issue 4 > 424-427
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Au-AlGaN/GaN HFET研制与器件特性

张锦文 , 闫桂珍 , 张太平 , 王玮 , 宁宝俊 and 武国英

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Key words: AlGaN/GaN, HFET, 输出特性

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    Received: 19 August 2015 Revised: Online: Published: 01 April 2002

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      Article Navigation >  Journal of Semiconductors  > 2002  >  23(4): 424-427
      张锦文, 闫桂珍, 张太平, 王玮, 宁宝俊, 武国英. Au-AlGaN/GaN HFET研制与器件特性[J]. 半导体学报(英文版), 2002, 23(4): 424-427.
      Citation:
      张锦文, 闫桂珍, 张太平, 王玮, 宁宝俊, 武国英. Au-AlGaN/GaN HFET研制与器件特性[J]. 半导体学报(英文版), 2002, 23(4): 424-427.
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      • Received Date: 2015-08-19

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