Chin. J. Semicond. > 2000, Volume 21 > Issue 11 > 1050-1054
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Carrier Depth Profile of Si/SiGe/Si n-p-n HBT Structural Materials Characterized by Electrochemical Capacitance- Voltage Method

林燕霞 , 黄大定 , 张秀兰 , 刘金平 , 李建平 , 高飞 , 孙殿照 , 曾一平 and 孔梅影

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Key words: HBT

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    林燕霞, 黄大定, 张秀兰, 刘金平, 李建平, 高飞, 孙殿照, 曾一平, 孔梅影. Carrier Depth Profile of Si/SiGe/Si n-p-n HBT Structural Materials Characterized by Electrochemical Capacitance- Voltage Method[J]. 半导体学报(英文版), 2000, 21(11): 1050-1054.
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    Received: 20 August 2015 Revised: Online: Published: 01 November 2000

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      Article Navigation >  Journal of Semiconductors  > 2000  >  21(11): 1050-1054
      林燕霞, 黄大定, 张秀兰, 刘金平, 李建平, 高飞, 孙殿照, 曾一平, 孔梅影. Carrier Depth Profile of Si/SiGe/Si n-p-n HBT Structural Materials Characterized by Electrochemical Capacitance- Voltage Method[J]. 半导体学报(英文版), 2000, 21(11): 1050-1054.
      Citation:
      林燕霞, 黄大定, 张秀兰, 刘金平, 李建平, 高飞, 孙殿照, 曾一平, 孔梅影. Carrier Depth Profile of Si/SiGe/Si n-p-n HBT Structural Materials Characterized by Electrochemical Capacitance- Voltage Method[J]. 半导体学报(英文版), 2000, 21(11): 1050-1054.
      shu

      • Received Date: 2015-08-20

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