Chin. J. Semicond. > 2003, Volume 24 > Issue 2 > 194-197
|

CONTENTS

具有降场电极U形漂移区SOI-LDMOS的耐压特性

罗卢杨 , 方健 , 罗萍 and 李肇基

+ Author Affiliations

PDF

Key words: SOI, LDMOS, RESURF

    • Search

    Advanced Search >>

    GET CITATION

    shu

    Export: BibTex EndNote

    Article Metrics

    Article views: 2513 Times PDF downloads: 1237 Times Cited by: 0 Times

    History

    Received: 20 August 2015 Revised: Online: Published: 01 February 2003

    Catalog

      Email This Article

      User name:
      Email:*请输入正确邮箱
      Code:*验证码错误
      Send
      Article Navigation >  Journal of Semiconductors  > 2003  >  24(2): 194-197
      罗卢杨, 方健, 罗萍, 李肇基. 具有降场电极U形漂移区SOI-LDMOS的耐压特性[J]. 半导体学报(英文版), 2003, 24(2): 194-197.
      Citation:
      罗卢杨, 方健, 罗萍, 李肇基. 具有降场电极U形漂移区SOI-LDMOS的耐压特性[J]. 半导体学报(英文版), 2003, 24(2): 194-197.
      shu

      • Received Date: 2015-08-20

      Catalog

        Journal of Semiconductors © 2017 All Rights Reserved   京ICP备05085259号-2

        /

        DownLoad:  Full-Size Img  PowerPoint
        Return
        Return