Chin. J. Semicond. > 2001, Volume 22 > Issue 3 > 251-255

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采用高真空 /快速热处理 /化学气相淀积外延SiGe HBT结构(英文)

贾宏勇 , 林惠旺 , 陈培毅 and 钱佩信

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Key words: 化学气相淀积, SiGe, HBT

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    Received: 19 August 2015 Revised: Online: Published: 01 March 2001

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      Article Navigation >  Journal of Semiconductors  > 2001  >  22(3): 251-255
      贾宏勇, 林惠旺, 陈培毅, 钱佩信. 采用高真空 /快速热处理 /化学气相淀积外延SiGe HBT结构(英文)[J]. 半导体学报(英文版), 2001, 22(3): 251-255.
      Citation:
      贾宏勇, 林惠旺, 陈培毅, 钱佩信. 采用高真空 /快速热处理 /化学气相淀积外延SiGe HBT结构(英文)[J]. 半导体学报(英文版), 2001, 22(3): 251-255.
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      • Received Date: 2015-08-19

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