Chin. J. Semicond. > 1995, Volume 16 > Issue 10 > 794-797
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退火条件对β—FeSi_2形成的影响

陈向东，王连卫，林贤，林成鲁，邹世昌

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    Received: 19 August 2015 Revised: Online: Published: 01 October 1995

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      Article Navigation >  Journal of Semiconductors  > 1995  >  16(10): 794-797
      陈向东，王连卫，林贤，林成鲁，邹世昌. 退火条件对β—FeSi_2形成的影响[J]. 半导体学报(英文版), 1995, 16(10): 794-797.
      Citation:
      陈向东，王连卫，林贤，林成鲁，邹世昌. 退火条件对β—FeSi_2形成的影响[J]. 半导体学报(英文版), 1995, 16(10): 794-797.
      shu

      • Received Date: 2015-08-19

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