Qi Ming, Xu Anhuai, Ai Likun, Sun Hao, Zhu Fuying. Growth and characterization of InP-based and phosphorous-involved materials for applications to HBTs byGSMBE were studied systematically. High quality 50ram InP-based HBT and 100mm InGaP/GaAs HBT epitaxial materials were obtained through optimizing the HBT structure design and the GSMBE growth condition. It is shown that the HBT devices and circuits with high performance can be achieved by using the epi-wafers grown by the GSMBE technology developed in this work.[J]. Journal of Semiconductors, 2007, 28(S1): 182-185. ****Qi M, Xu A H, Ai L K, Sun H, Zhu F Y. Growth and characterization of InP-based and phosphorous-involved materials for applications to HBTs byGSMBE were studied systematically. High quality 50ram InP-based HBT and 100mm InGaP/GaAs HBT epitaxial materials were obtained through optimizing the HBT structure design and the GSMBE growth condition. It is shown that the HBT devices and circuits with high performance can be achieved by using the epi-wafers grown by the GSMBE technology developed in this work.[J]. Chin. J. Semicond., 2007, 28(S1): 182.