Chin. J. Semicond. > 2004, Volume 25 > Issue 5 > 526-529
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多缓冲层对MOCVD生长的GaN性能的影响

陆敏 , 方慧智 , 黎子兰 , 陆曙 , 杨华 , 章蓓 and 张国义

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Key words: MOCVD, GaN, 缓冲层

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    Received: 19 August 2015 Revised: Online: Published: 01 May 2004

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      Article Navigation >  Journal of Semiconductors  > 2004  >  25(5): 526-529
      陆敏, 方慧智, 黎子兰, 陆曙, 杨华, 章蓓, 张国义. 多缓冲层对MOCVD生长的GaN性能的影响[J]. 半导体学报(英文版), 2004, 25(5): 526-529.
      Citation:
      陆敏, 方慧智, 黎子兰, 陆曙, 杨华, 章蓓, 张国义. 多缓冲层对MOCVD生长的GaN性能的影响[J]. 半导体学报(英文版), 2004, 25(5): 526-529.
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      • Received Date: 2015-08-19

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