Chin. J. Semicond. > 1984, Volume 5 > Issue 4 > 449-452
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Al-SiO_2-Si/n系统的r辐照界面效应及退火特性

张秀淼 , 顾峰 and 谢可勋

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    Received: 20 August 2015 Revised: Online: Published: 01 April 1984

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      Article Navigation >  Journal of Semiconductors  > 1984  >  5(4): 449-452
      张秀淼, 顾峰, 谢可勋. Al-SiO_2-Si/n系统的r辐照界面效应及退火特性[J]. 半导体学报(英文版), 1984, 5(4): 449-452.
      Citation:
      张秀淼, 顾峰, 谢可勋. Al-SiO_2-Si/n系统的r辐照界面效应及退火特性[J]. 半导体学报(英文版), 1984, 5(4): 449-452.
      shu

      • Received Date: 2015-08-20

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