Chin. J. Semicond. > 2006, Volume 27 > Issue 1 > 96-99

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Photoresponse of ZnO Single Crystal Film

Li Ying, Feng Shiwei, Yang Ji, Zhang Yuezong, Xie Xuesong, Lü Changzhi and Lu Yicheng

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Abstract: The Ohmic contact and photoresponse of a ZnO single crystal film produced by MOCVD are investigated.The electrical and photoresponsive changes in the ZnO film due to the RF sputter deposition of SiO2 (antireflective coating) are also discussed.A nonalloyed Al/Au metallization scheme forms a good Ohmic contact on the n-type ZnO.RF sputter deposition of SiO2 induces defects which behave as carrier traps and prolongs response time.The photoresponse of the ZnO epitaxial film deteriorates with time.

Key words: ZnO single crystal filmMOCVDphotoresponseAR coatingRF sputter damage

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    Received: 20 August 2015 Revised: Online: Published: 01 January 2006

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      Li Ying, Feng Shiwei, Yang Ji, Zhang Yuezong, Xie Xuesong, Lü Changzhi, Lu Yicheng. Photoresponse of ZnO Single Crystal Film[J]. Journal of Semiconductors, 2006, 27(1): 96-99. ****Li Y, Feng S W, Yang J, Zhang Y Z, Xie X S, Lü C, Lu Y C. Photoresponse of ZnO Single Crystal Film[J]. Chin. J. Semicond., 2006, 27(1): 96.
      Citation:
      Li Ying, Feng Shiwei, Yang Ji, Zhang Yuezong, Xie Xuesong, Lü Changzhi, Lu Yicheng. Photoresponse of ZnO Single Crystal Film[J]. Journal of Semiconductors, 2006, 27(1): 96-99. ****
      Li Y, Feng S W, Yang J, Zhang Y Z, Xie X S, Lü C, Lu Y C. Photoresponse of ZnO Single Crystal Film[J]. Chin. J. Semicond., 2006, 27(1): 96.

      Photoresponse of ZnO Single Crystal Film

      • Received Date: 2015-08-20

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