Chin. J. Semicond. > 2001, Volume 22 > Issue 8 > 1038-1043
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沟道热载流子导致的 PDSOI NMOSFET's击穿特性(英文)

刘红侠 , 郝跃 and 朱建纲

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Key words: 热载流子效应, 器件寿命, SOINMOSFET's, SIMOX

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    Received: 20 August 2015 Revised: Online: Published: 01 August 2001

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      Article Navigation >  Journal of Semiconductors  > 2001  >  22(8): 1038-1043
      刘红侠, 郝跃, 朱建纲. 沟道热载流子导致的 PDSOI NMOSFET's击穿特性(英文)[J]. 半导体学报(英文版), 2001, 22(8): 1038-1043.
      Citation:
      刘红侠, 郝跃, 朱建纲. 沟道热载流子导致的 PDSOI NMOSFET's击穿特性(英文)[J]. 半导体学报(英文版), 2001, 22(8): 1038-1043.
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      • Received Date: 2015-08-20

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