| Citation: |
Li Cheng, Lai Hongkai, Chen Songyan. Influence of Annealing Temperature on Luminescence of β-FeSi2 Particles Embedded in Silicon[J]. Journal of Semiconductors, 2006, 27(1): 82-85.
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Li C, Lai H K, Chen S Y. Influence of Annealing Temperature on Luminescence of β-FeSi2 Particles Embedded in Silicon[J]. Chin. J. Semicond., 2006, 27(1): 82.
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Influence of Annealing Temperature on Luminescence of β-FeSi2 Particles Embedded in Silicon
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Abstract
The influence of annealing temperature on the luminescence and electrical properties of β-FeSi2 particles embedded in silicon is investigated.The experimental results indicate that annealing at 900℃ improves the particles’ crystal quality,but dislocations are introduced in the silicon due to the thermal and lattice mismatches,which broaden the photoluminescence spectrum and enlarge the leakage current.Stronger room temperature electroluminescence is obtained from the sample annealed at 800℃.-
Keywords:
- β-FeSi2,
- photoluminescence,
- thermal annealing temperature
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References
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Proportional views
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