Chin. J. Semicond. > 1991, Volume 12 > Issue 8 > 453-460

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Ⅲ-Ⅴ族化合物中DX中心的新理论

薛舫时

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    Received: 19 August 2015 Revised: Online: Published: 01 August 1991

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      Article Navigation >  Journal of Semiconductors  > 1991  >  12(8): 453-460
      薛舫时. Ⅲ-Ⅴ族化合物中DX中心的新理论[J]. 半导体学报(英文版), 1991, 12(8): 453-460.
      Citation:
      薛舫时. Ⅲ-Ⅴ族化合物中DX中心的新理论[J]. 半导体学报(英文版), 1991, 12(8): 453-460.
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      • Received Date: 2015-08-19

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