| Citation: |
Meng Hui, Wang Cong. Growth and Characterization of Zn Doped SnO2 Nanowires[J]. Journal of Semiconductors, 2007, 28(S1): 267-270.
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Meng H, Wang C. Growth and Characterization of Zn Doped SnO2 Nanowires[J]. Chin. J. Semicond., 2007, 28(S1): 267.
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Growth and Characterization of Zn Doped SnO2 Nanowires
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Abstract
Zn doped SnOz(ZSO)nanowires were fabricated on Si substrates by chemical vapor deposition (CVD) on a large scale at 770。C.The ZSO nanowires had diameters in the range of 30～100nm and lengths of several tens of micrometers. They were characterized by means of X-ray powder diffractio n(XRD)，field-emission scanning electron microscopy(FESEM)一energy·dispersive X-ray (EDX) analysis，transmission electron microscopy (TEM)，and X·ray photoelectron spectroscopy(xPs).-
Keywords:
- SnO2 nanowires,
- chemical vapor deposition,
- Zn doped
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References
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Proportional views
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