Chin. J. Semicond. > 2003, Volume 24 > Issue 3 > 284-289
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在柔性衬底上制备的非晶硅薄膜力学性能研究

丁天怀 , 王鹏 and 徐峰

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Key words: 氢化非晶硅薄膜, 柔性衬底, PECVD, 喇曼, 扫描电子显微镜, 力学性能

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    Received: 20 August 2015 Revised: Online: Published: 01 March 2003

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      Article Navigation >  Journal of Semiconductors  > 2003  >  24(3): 284-289
      丁天怀, 王鹏, 徐峰. 在柔性衬底上制备的非晶硅薄膜力学性能研究[J]. 半导体学报(英文版), 2003, 24(3): 284-289.
      Citation:
      丁天怀, 王鹏, 徐峰. 在柔性衬底上制备的非晶硅薄膜力学性能研究[J]. 半导体学报(英文版), 2003, 24(3): 284-289.
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      • Received Date: 2015-08-20

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