Chin. J. Semicond. > 1994, Volume 15 > Issue 4 > 285-288
|

CONTENTS

稀土Er离子注入InP的退火及发光特性

章蓓，陈孔军，王舒民，丁晓民，虞丽生，郑婉华，徐俊英，李仪

+ Author Affiliations

PDF

    • Search

    Advanced Search >>

    GET CITATION

    shu

    Export: BibTex EndNote

    Article Metrics

    Article views: 2561 Times PDF downloads: 1037 Times Cited by: 0 Times

    History

    Received: 18 August 2015 Revised: Online: Published: 01 April 1994

    Catalog

      Email This Article

      User name:
      Email:*请输入正确邮箱
      Code:*验证码错误
      Send
      Article Navigation >  Journal of Semiconductors  > 1994  >  15(4): 285-288
      章蓓，陈孔军，王舒民，丁晓民，虞丽生，郑婉华，徐俊英，李仪. 稀土Er离子注入InP的退火及发光特性[J]. 半导体学报(英文版), 1994, 15(4): 285-288.
      Citation:
      章蓓，陈孔军，王舒民，丁晓民，虞丽生，郑婉华，徐俊英，李仪. 稀土Er离子注入InP的退火及发光特性[J]. 半导体学报(英文版), 1994, 15(4): 285-288.
      shu

      • Received Date: 2015-08-18

      Catalog

        Journal of Semiconductors © 2017 All Rights Reserved   京ICP备05085259号-2

        /

        DownLoad:  Full-Size Img  PowerPoint
        Return
        Return