| Citation: |
Liu Bin, Zhang Rong, Xie Zili, Ji Xiaoli, Li Liang, Zhou Jianjun, Jiang Ruolian, Han Ping, Zheng Youdou, Zheng Jianguo, Gong Haimei. AIGaN-Based Multi-Type Distributed Bragg Reflectors Grown by MOCVD[J]. Journal of Semiconductors, 2007, 28(S1): 492-495.
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Liu B, Zhang R, Xie Z L, Ji X L, Li L, Zhou J J, Jiang R L, Han P, Zheng Y D, Zheng J G, Gong H M. AIGaN-Based Multi-Type Distributed Bragg Reflectors Grown by MOCVD[J]. Chin. J. Semicond., 2007, 28(S1): 492.
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AIGaN-Based Multi-Type Distributed Bragg Reflectors Grown by MOCVD
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Abstract
A1GaN-based multi-type distributed Bragg reflectors (DBRs) grown by metal-organic chemical vapor deposition (MOCVD)were investigated.These DBRs work at the wavelengths from blue/green to ultraviolet，which respectively com. pose of several periods of GaN/AlN，Al0.3Ga0.7 N/AlN，Al0.5 Ga0.5 N/AlN bi-layers grown on thick GaN templates.These DBRs show smooth surfaces with roughness less than lnm probed by atomic force microscopy.The good periodie structure and sharp interfaces are determined by high-resolution X-ray diffraction and cross-section TEM.The reflectance spectra of these DBRs are measured by ultraviolet.visible spectrometer，which show the reflectance and bandwidth relates to not only the number of stacks but also the difference of index of refraction.-
Keywords:
- MOCVD,
- DBRs,
- reflectance
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References
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Proportional views
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