Chin. J. Semicond. > 1997, Volume 18 > Issue 4 > 241-245

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HgCdTe材料汞空位浓度的计算

杨建荣

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    Received: 19 August 2015 Revised: Online: Published: 01 April 1997

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      Article Navigation >  Journal of Semiconductors  > 1997  >  18(4): 241-245
      杨建荣. HgCdTe材料汞空位浓度的计算[J]. 半导体学报(英文版), 1997, 18(4): 241-245.
      Citation:
      杨建荣. HgCdTe材料汞空位浓度的计算[J]. 半导体学报(英文版), 1997, 18(4): 241-245.
      shu

      • Received Date: 2015-08-19

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